Istrazivanja i projektovanja za privreduJournal of Applied Engineering Science

TRIZ AND HDC SAPPHIRE GROWTH PROCESS


DOI: 10.5937/jaes15-11917
This is an open access article distributed under the CC BY-NC-ND 4.0 terms and conditions. 
Creative Commons License

Volume 15 article 408 pages: 9-14

Stefan Medvecky
Faculty of Mechanical Engineering, University of Žilina, Slovakia

Miroslav Mikita
Faculty of Mechanical Engineering, University of Žilina, Slovakia

Michal Hoc
Faculty of Mechanical Engineering, University of Žilina, Slovakia

Juraj Kajan
Faculty of Mechanical Engineering, University of Žilina, Slovakia

The application of Theory of Inventive Problem Solving (TRIZ) into sapphire single crystal growth process provided thorough analysis of a problem as well as introduced two conceptually new solutions. The innovation of the Bagdasarov – Horizontally Directed Crystallization (HDC) by resolving the pollution of the observation window improves the control over the process. The increased accuracy of the control leads to supreme quality of the resultant sapphire single crystal. The ultimate goal of betterment is the complete automation of the growth process.

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